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3.3 kV Back-Gate-controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

DOI
10.17023/0wk8-j797
  • EDS
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    Length: 00:19:49

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