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Capacitance Boosting bt Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device

Eul Joong Shin, Sung Won Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Jae Hwan Kim, Wan Sij Hwang, Jaeduck Lee, Byung Jin Cho

DOI
10.17023/yjqc-sg05
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    Length: 00:20:16

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