Skip to main content

Capacitance Boosting bt Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device

Eul Joong Shin, Sung Won Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Jae Hwan Kim, Wan Sij Hwang, Jaeduck Lee, Byung Jin Cho

DOI
10.17023/yjqc-sg05
  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
    Length: 00:20:16

More Like This

Systems Thinking in Digital Engineering
13 Nov 2024

Systems Thinking in Digital Engineering

1.00 pdh
  • SYSC
    Members: Free
    IEEE Members: Free
    Non-members: Free
Manufacturing Webinar Series - Exploring Sustainable Alternatives in Semiconductor Manufacturing
13 Nov 2024

Manufacturing Webinar Series - Exploring Sustainable Alternatives in Semiconductor Manufacturing

1.00 pdh
  • EDS
    Members: Free
    IEEE Members: $15.00
    Non-members: $20.00
Tutorial IEEE 1427 Standard- Definitions and Criteria
09 Nov 2024

Tutorial IEEE 1427 Standard- Definitions and Criteria

  • PES
    Members: Free
    IEEE Members: $11.00
    Non-members: $15.00