Skip to main content

HfO2 Based FeFET and FTJ for Ferroelectric Memory Centric 3D LSI Towards Low Power and High Density Storage and AI Applications

M. Saitoh, R. Ichihara, M. Yamaguchi, K. Suzuki, K. Takano, K. Akari, K. Takahashi, Y. Kamiya, K. Matsuo, Y. Kamimuta, K. Sakuma, K. Ota, S. Fujii

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
    Length: 00:20:31

More Like This

  • IAS
    Members: $150.00
    IEEE Members: $250.00
    Non-members: $450.00
  • PES
    Members: Free
    IEEE Members: $45.00
    Non-members: $70.00
  • IAS
    Members: $150.00
    IEEE Members: $250.00
    Non-members: $450.00