Atomic Hydrogen Exposure to Enable High Quality Low Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking J. Franco DOI 10.17023/kzxm-bv44 EDS Members: $5.00 IEEE Members: $10.00 Non-members: $20.00 Length: 00:20:56 15 Dec 2020 Tags: 3d IEEE high quality iedm franco low temperature pmos nbti sio2 eds sequential tier stacking reliability atomic hydrogen exposure video
15 Dec 2020 Tags: 3d IEEE high quality iedm franco low temperature pmos nbti sio2 eds sequential tier stacking reliability atomic hydrogen exposure video