10 nm Channel Length Indium Tin Oxide Transistors with I on =1860 uA/um, Gm = 1050 uS/um at V ds = 1V with BEOL Compatibility Shengman Li DOI 10.17023/s4h0-mm84 EDS Members: $5.00 IEEE Members: $10.00 Non-members: $20.00 Length: 00:18:30 15 Dec 2020 Tags: IEEE eds beol compatibility indium tin oxide transistors iedm shengman li channel length video
15 Dec 2020 Tags: IEEE eds beol compatibility indium tin oxide transistors iedm shengman li channel length video