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Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity
16 Jun 2020

Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Studies on Correlation Between Diluted NH4OH Concentration of Pre GOX Clean SC1 and GOX Breakdown Induced by Silicon Surface Oxides
01 Mar 2020

Studies on Correlation Between Diluted NH4OH Concentration of Pre GOX Clean SC1 and GOX Breakdown Induced by Silicon Surface Oxides

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00