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Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity
16 Jun 2020

Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
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