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Field Induced Acceptor Ionization in Enhancement Mode GaN p-MOSFETs
15 Dec 2020

Field Induced Acceptor Ionization in Enhancement Mode GaN p-MOSFETs

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Advances in Research on 300 mm Gallium Nitride on Si (111) NMOS Transistor and Silicon CMOS Integration
15 Dec 2020

Advances in Research on 300 mm Gallium Nitride on Si (111) NMOS Transistor and Silicon CMOS Integration

  • EDS
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    Non-members: $20.00