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Anti Ferroelectric HfxZr1-xO2 Capactiors for High Density 3D Embedded DRAM
15 Dec 2020

Anti Ferroelectric HfxZr1-xO2 Capactiors for High Density 3D Embedded DRAM

  • EDS
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High Speed Memory Operation in Channel Last, Back Gated Ferroelectric Transistors
15 Dec 2020

High Speed Memory Operation in Channel Last, Back Gated Ferroelectric Transistors

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00