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High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2 nm/0.6 nm
15 Dec 2020

High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2 nm/0.6 nm

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Low Leakage Mg-Compensated GaN Schottky Diodes on Free Standing GaN Substrate for Hight Energy Ichythus particle Detection
01 Mar 2020

Low Leakage Mg-Compensated GaN Schottky Diodes on Free Standing GaN Substrate for Hight Energy Ichythus particle Detection

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00