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GaN/AIN p-channel HFETs with I MAX > 420 mA/mm and ~20 GHz f T/ f MAX
15 Dec 2020

GaN/AIN p-channel HFETs with I MAX > 420 mA/mm and ~20 GHz f T/ f MAX

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Advances in Research on 300 mm Gallium Nitride on Si (111) NMOS Transistor and Silicon CMOS Integration
15 Dec 2020

Advances in Research on 300 mm Gallium Nitride on Si (111) NMOS Transistor and Silicon CMOS Integration

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00