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zhihong chen

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Sub-1nm EOT ES2-FET with I DS > 600 uA/um at V DS = 1V and SS < 70 mV/dec at L G = 40nm
15 Dec 2020

Sub-1nm EOT ES2-FET with I DS > 600 uA/um at V DS = 1V and SS < 70 mV/dec at L G = 40nm

  • EDS
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