Skip to main content

characterization scheme

Showing 1 - 1 of 1 resources. Too many results? Use the search filters to refine your search.
Sort by
Characterization Scheme for Plasma Induced Defect Creation Due to Stochastic Lateral Straggling in Si Substrates for Ultra Low Leakage Devices
15 Dec 2020

Characterization Scheme for Plasma Induced Defect Creation Due to Stochastic Lateral Straggling in Si Substrates for Ultra Low Leakage Devices

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00