Characterization Scheme for Plasma Induced Defect Creation Due to Stochastic Lateral Straggling in Si Substrates for Ultra Low Leakage Devices
Y. Sato, T. Yamada, K. Nishimura, M. Yamasaki, M. Murakami, K. Urabe, K. Eriguchi
-
Members: $5.00EDS
IEEE Members: $10.00
Non-members: $20.00Length: 00:19:55
15 Dec 2020
