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GaN/AIN p-channel HFETs with I MAX > 420 mA/mm and ~20 GHz f T/ f MAX
15 Dec 2020

GaN/AIN p-channel HFETs with I MAX > 420 mA/mm and ~20 GHz f T/ f MAX

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
First Demonstration of Heterogeneous Complemntary FETs Utilizing Low Temperature (200 C) Hetero Layers Bonding Technique (LT-HBT)
15 Dec 2020

First Demonstration of Heterogeneous Complemntary FETs Utilizing Low Temperature (200 C) Hetero Layers Bonding Technique (LT-HBT)

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00