GaN/AIN p-channel HFETs with I MAX > 420 mA/mm and ~20 GHz f T/ f MAX
K. Nomoto, R. Chaudhuri, S.J. Bader, L. Li, A. Hickman, S. Haung, H. Lee, T. Maeda, H. W. Then, M. Radosavljevic, P. Fischer, A. Molnar, J.C.M. Hwang, H. G. Xing, D. Jena
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15 Dec 2020
