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Advances in Research on 300 mm Gallium Nitride on Si (111) NMOS Transistor and Silicon CMOS Integration
15 Dec 2020

Advances in Research on 300 mm Gallium Nitride on Si (111) NMOS Transistor and Silicon CMOS Integration

  • EDS
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    IEEE Members: $10.00
    Non-members: $20.00
Gate-All-Around Strained Si 0.4 Ge 0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application
15 Dec 2020

Gate-All-Around Strained Si 0.4 Ge 0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
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