Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length
G. Pitner, Z. Zhang, Q. Lin, S.-K Su, C. Gilardi, C. Kuo, H. Kashyap, T. Weiss, Z. Yu, T.-A. Chao, L.-J. Li, S. Mitra, H.-S. P. Wong, J. Cai, A. Kummel, P. Bandaru, M. Passlack
-
Members: $5.00EDS
IEEE Members: $10.00
Non-members: $20.00Length: 00:19:47
15 Dec 2020
