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BEOL-Compatible Multiple Metal-Ferroelectric-Metal (n-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability
15 Dec 2020

BEOL-Compatible Multiple Metal-Ferroelectric-Metal (n-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
First Demonstration of Heterogeneous Complemntary FETs Utilizing Low Temperature (200 C) Hetero Layers Bonding Technique (LT-HBT)
15 Dec 2020

First Demonstration of Heterogeneous Complemntary FETs Utilizing Low Temperature (200 C) Hetero Layers Bonding Technique (LT-HBT)

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Hydrogen Absorption Method Using HfOx in Crystalline In-Ga-Zn Oxide FETs for NVM Applications
15 Dec 2020

Hydrogen Absorption Method Using HfOx in Crystalline In-Ga-Zn Oxide FETs for NVM Applications

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Implication of Channel Percolation in Ferroelectric FETs for Threshold Voltage Shift Modeling
15 Dec 2020

Implication of Channel Percolation in Ferroelectric FETs for Threshold Voltage Shift Modeling

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length
15 Dec 2020

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
A Model for Hole Trapping-Detrapping Kinetics During NBTI in p-Channel FETs
01 Mar 2020

A Model for Hole Trapping-Detrapping Kinetics During NBTI in p-Channel FETs

  • EDS
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    IEEE Members: $10.00
    Non-members: $20.00
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