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Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length
15 Dec 2020

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

  • EDS
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3D Integration of Vertical Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers
15 Dec 2020

3D Integration of Vertical Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Advanced MTJ Stack Engineering of STT-MRAM to Realize High Speed Applications
15 Dec 2020

Advanced MTJ Stack Engineering of STT-MRAM to Realize High Speed Applications

  • EDS
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First Demonstration of Heterogeneous Complemntary FETs Utilizing Low Temperature (200 C) Hetero Layers Bonding Technique (LT-HBT)
15 Dec 2020

First Demonstration of Heterogeneous Complemntary FETs Utilizing Low Temperature (200 C) Hetero Layers Bonding Technique (LT-HBT)

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00