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Exploring FinFET and Gate All-Around FET in SRAM Cell Arrays at the 3nm Process Node
01 Jul 2023

Exploring FinFET and Gate All-Around FET in SRAM Cell Arrays at the 3nm Process Node

  • RFID
    Members: Free
    IEEE Members: $11.00
    Non-members: $15.00
Gate-All-Around Strained Si 0.4 Ge 0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application
15 Dec 2020

Gate-All-Around Strained Si 0.4 Ge 0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors
09 Apr 2018

BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors

  • SSCS
    Members: Free
    IEEE Members: Free
    Non-members: Free